The MERIT Summer Research Program

MRCP '99 Projects


A complete listing of projects for the MRCP '99 program appears below, along with each project's participants, a brief abstract, and a link to the poster presented by project members at the MERIT Fair '99. Posters are in Adobe Acrobat .pdf format. Acrobat Reader is needed to view these documents, and is available for free from Adobe's web site. Download it here.

Microelectronics Research Collaboration Program (MRCP)Automating Electrical Characterization of Bottom-Emitting VSCELs

  • Michael Martin, University of Maryland
  • Alex Sistla, Duke University
  • Mr. Wayne Chang, ARL
  • Mr. Brian Riley, ARL
  • Dr. George Simonis, ARL
  • Mr. Dan Young, ARL

Abstract: Vertical-cavity surface-emitting lasers (VCSELs) are a type of semiconductor laser currently being developed for applications utilizing optical interconnects. Efficient VCSEL fabrication requires process monitoring in the form of current/voltage/optical power characterization of devices. A highly automated, computer-controlled system for rapid, high-volume device characterization was developed in this project
Poster

Pulsed Laser Deposition and Characterization of TiN/AIN/SiC Heterostructures

  • Kathleen Baynes, University of Maryland
  • Amit Patel, University of Maryland
  • Dr. Skip Scozzie, ARL
  • Prof. T. Venkatesan, University of Maryland
  • Prof. R. Vispute, University of Maryland

Abstract: This project deals with the fabrication and characterization of TiN/AIN/SiC high temperature and high-field metal-insulator-semiconductor devices. The AIN dielectric layer was grown using pulsed laser deposition and was tested using X-ray Diffraction, Ion-Scattering, and Transmission Electron Microscopy techniques. Software algorithms were developed and used for high-temperature (25 to 450? C) electrical characterization.
Poster

Application of LabView to Control the Feedback Loop in a Photothermal Interferometer

  • Juan Carlos Alvarado, Rensselaer Polytechnic Institute
  • Dr. James Gillespie, ARL
  • Dr. Nick Fell, ARL
  • Dr. Paul Pellegrino, ARL

Abstract: The purpose of this project was to design a software controlled feedback loop for the photothermal interferometer to balance the intensity of two laser beams from a Helium/Neon laser. "Balancing" the beams is what brings the interferometer to this critical and most sensitive position.
Unbalanced beams introduced into the sample can cause results to be skewed due to thermal drift.
Poster

Determining the Relationship between Densification and Photoinduced Refractive Index Changes in Fiber Bragg Gratings

  • Aisha Husain, University of Virginia
  • Prof. Chris Davis, University of Maryland
  • Prof. Ali Gungor, Faith University; Istanbul, Turkey
  • Dr. Saeed Pilevar, University of Maryland

Abstract: This experiment further clarifies the validity of the densification theory as the explanation for photoinduced refractive index changes. Bragg gratings of different periods were fabricated over the core region of optical quality fiber. A near field scanning optical microscope was used to determine the correlation between the surface topography and refractive index modulation.Ohmic Contacts to p-6H-SiC.
Poster

Using Focused Ion Beam Surface Modification

  • Jothi Narayanan, University of Maryland
  • Prof. Agis A. Iliadis, University of Maryland
  • Dr. Ken A. Jones, University of Maryland

Abstract: Gallium ions were incorporated into the SiC lattice using FIB surface-modification, thereby restructuring the surface and creating a new type of material with better ohmic properties. A Transmission Line Model was used for contact resistance measurements. The Ga/SiC interface was analyzed by TEM to understand amorphization and defect structure phenomena.
Poster

Improved Physical Contact To Silicon Carbide (SiC)

  • Matthew Prenatt, University of Maryland
  • Prof. Agis A. Iliadis, University of Maryland
  • Prof. Ken A. Jones, University of Maryland

Nickel (Ni), a common ohmic contract to n-type SiC, often makes a poor physical contact. Twelve specimens were prepared by changing metal thickness (50, 100, and 200 nm), annealing temperatures (900, 100, and 1100? C), and type of substrate (Si and SiC). The Ni/SiC interface reaction has been investigated using SEM, XRD, and Auger analysis to determine how the physical contact can be improved.
Poster

 

RITE Site '99 Projects

MERIT Fair '99

MERIT Home