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Microelectronics Research Collaboration Program (MRCP)Automating Electrical Characterization of Bottom-Emitting VSCELs
Abstract: Vertical-cavity
surface-emitting lasers (VCSELs) are a type of semiconductor laser currently
being developed for applications utilizing optical interconnects. Efficient
VCSEL fabrication requires process monitoring in the form of current/voltage/optical
power characterization of devices. A highly automated, computer-controlled
system for rapid, high-volume device characterization was developed
in this project Pulsed Laser Deposition and Characterization of TiN/AIN/SiC Heterostructures
Abstract: This project
deals with the fabrication and characterization of TiN/AIN/SiC high
temperature and high-field metal-insulator-semiconductor devices. The
AIN dielectric layer was grown using pulsed laser deposition and was
tested using X-ray Diffraction, Ion-Scattering, and Transmission Electron
Microscopy techniques. Software algorithms were developed and used for
high-temperature (25 to 450? C) electrical characterization. Application of LabView to Control the Feedback Loop in a Photothermal Interferometer
Abstract: The purpose
of this project was to design a software controlled feedback loop for
the photothermal interferometer to balance the intensity of two laser
beams from a Helium/Neon laser. "Balancing" the beams is what
brings the interferometer to this critical and most sensitive position.
Determining the Relationship between Densification and Photoinduced Refractive Index Changes in Fiber Bragg Gratings
Abstract: This experiment
further clarifies the validity of the densification theory as the explanation
for photoinduced refractive index changes. Bragg gratings of different
periods were fabricated over the core region of optical quality fiber.
A near field scanning optical microscope was used to determine the correlation
between the surface topography and refractive index modulation.Ohmic
Contacts to p-6H-SiC. Using Focused Ion Beam Surface Modification
Abstract: Gallium
ions were incorporated into the SiC lattice using FIB surface-modification,
thereby restructuring the surface and creating a new type of material
with better ohmic properties. A Transmission Line Model was used for
contact resistance measurements. The Ga/SiC interface was analyzed by
TEM to understand amorphization and defect structure phenomena. Improved Physical Contact To Silicon Carbide (SiC)
Nickel (Ni), a common ohmic
contract to n-type SiC, often makes a poor physical contact. Twelve
specimens were prepared by changing metal thickness (50, 100, and 200
nm), annealing temperatures (900, 100, and 1100? C), and type of substrate
(Si and SiC). The Ni/SiC interface reaction has been investigated using
SEM, XRD, and Auger analysis to determine how the physical contact can
be improved. |
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