PEER Project Descriptions: Summer 2003
1.
High Temperature Dielectrics for Wide Bandgap Power Devices
Prof. R. D. Vispute, (Physics, UMCP)
Our current research activities under the PEER are focused on wide band gap semiconductors (particularly SiC) and related materials, processing, and devices to achieve ARL's goals on the Future Combat System of Systems (FCSS) that requires devices such as power switches and motor drive electronics to operate for 10,000 hours at junction temperatures of 300°C and above.
2.
Materials Processing, Characterization, and Removal of Defects in Ion Implanted SiC for Fabrication of Power Electronics
Prof. T. Venkatesan
The recent focus on Future Combat Systems (FCS) has defined the role of the wide bandgap semiconductor, SiC for the fabrication of high-temperature and high-power electronics. Exploiting this material and novel process technologies, the Army is interested in developing a variety of electronic devices (MISFETS, GTO thyristors, diodes etc.) operating at high temperatures with high power. In the new PEER program we are proposing to continue our efforts to develop critical technologies and processes to deliver smooth and device quality, locally doped p-type SiC for the fabrication of high temperature and high-power devices such as the thyristor that are necessary for power electronics in future combat systems.
3.
Modeling, Characterization, and Design of Wide Bandgap MOSFETs and MISFETs for High-Temperature/High-Power Applications
Prof. N. Goldsman
In this Project we propose to investigate the design of new high-temperature/high-power electronics based on silicon carbide (SiC), a material which shows great promise for use in power electronics. Power-conversion/motor-control systems which can operate at high power densities and high temperatures are being designed. To control these systems, we will investigate the design and development of high temperature voltage-controlled electronics. As was demonstrated in industry for room-temperature applications, the optimal component for electronic control circuits was the silicon MOSFET. For high temperature we intend to build on this strategy by developing SiC MOSFETs. SiC is unique in the sense that it appears to be the only semiconductor capable of operating at high temperatures, which can also be used as a basis for MOSFET fabrication.
4.
Wide Band Gap Heterostructures of Oxides and Nitrates for Fabrication
of Advanced MEMS
Prof. R. D. Vispute, (Physics, UMCP)
Advanced military and commercial systems need a wide range of microelectromechanical systems (MEMS) and related technologies for a variety of operations in harsh environment such as high temperatures, intense vibrations, erosive flow, corrosive media, and aerospace. This project, based on joint efforts between UMD and ARL, will include scaled-up thin film growth on large area substrates, an investigation of novel MgZnO films as a function of alloy composition, development of material integration strategies with SiC substrates, and fabrication of high frequency resonant MEMS test devices. Specific goals include design and deposition of thin film heterostructures of piezoelectric AlN and MgZnO and appropriate conductive layers on silicon and/or SiC substrates, and demonstration of pattern transfer processes to fabricate MEMS test devices for potential integration with SiC circuits.