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26) A. Akturk, J. McGarrity, N. Goldsman, D. Lichtenwalner, B.
Hull, D. Grider, R. Wilkins, “Predicting cosmic
ray-induced failures in silicon carbide power devices,”
IEEE Transactions on Nuclear Science 66(7), 1828-1832 (2019).
25) A. Akturk, J. McGarrity, N. Goldsman, D. Lichtenwalner, B.
Hull, D. Grider, R. Wilkins, “Terrestrial
neutron-induced failures in silicon carbide power MOSFETs and diodes,”
IEEE Transactions on Nuclear Science 65(6), 1248-1254 (2018).
24) A. Akturk, R. Wilkins, J. McGarrity, B.
Gersey, “Single event effects in
Si and SiC Power MOSFETs due to terrestrial neutrons,”
IEEE Transactions on Nuclear Science 64(1), 529-535 (2017).
23) D. P. Ettisserry,
N. Goldsman, A. Akturk, A. J. Lelis,
“Negative
bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps
in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors,”
Journal of Applied Physics 118, 044507-1-13 (2015).
22) D. P. Ettisserry,
N. Goldsman, A. Akturk, A. J. Lelis,
“Structure,
bonding, and passivation of single carbon-related oxide hole traps near
4H-SiC/SiO2 interfaces,” Journal of Applied Physics 116,
174502-1-7 (2014).
21) S. Salemi, N. Goldsman, D. P. Ettisserry, A.
Akturk, A. Lelis, “The effect of defects and their
passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide
interface,” Journal
of Applied Physics 113,
053703-1-6 (2013).
20) A. Akturk, J. M. McGarrity, S. Potbhare, N. Goldsman, “Radiation effects in
commercial 1200 V 24 A silicon carbide power MOSFETs,”
IEEE Transactions on Nuclear Science 59(6), 3258-3264 (2012).
19) A. Akturk, M. Holloway, S. Potbhare, D. Gundlach, B. Li, N. Goldsman,
M. Peckerar, K. P. Cheung, “Compact and distributed
modeling of cryogenic bulk mosfet operation,”
IEEE Transactions on Electron Devices 57(6), 1334-1342 (2010).
18) A. Akturk, M. Peckerar,
K. Eng, J. Hamlet, S. Potbhare,
E. Longoria, R. Young, T. Gurrieri, M. S. Carroll,
N. Goldsman, “Compact modeling of
0.35mm SOI CMOS
technology node for 4K dc operation using Verilog-A,”
Microelectronic Engineering 87(12), 2518-2524 (2010).
17) M. Dandin, A.
Akturk, B. Nouri, N. Goldsman, P. Abshire, “Characterization of single-photon
avalanche diodes in a 0.5 micrometer standard cmos
process. Part 1: perimeter breakdown suppression,” IEEE Sensors Journal 10(11), 1682 - 1690 (2010).
16) A. Akturk, N. Goldsman,
S. Potbhare, A. Lelis, “High field
density-functional-theory based monte carlo: 4h-sic
impact ionization and velocity saturation,” Journal of Applied Physics 105, 033703-1-7 (2009).
15) Z. Dilli, A.
Akturk, N. Goldsman, G. Metze,
“Controlled
on-chip heat transfer for directed heating and temperature reduction,”
Solid State Electronics 53(6), 590–598 (2009).
14) A. Akturk, N. Goldsman, “Electron transport and
full-band electron-phonon interactions in graphene,” Journal of Applied Physics 103,
053702-1-8 (2008).____also in Virtual Journal of Nanoscale Science and
Technology 17(11) (2008).
13) A. Akturk, N. Goldsman,
S. Aslam, J. Sigwarth, F. Herrero, “Comparison of 4h-sic impact
ionization models using experiments and self-consistent simulations,”
Journal of Applied Physics 104, 026101-1-3 (2008).
12) S. Potbhare, N. Goldsman, A. Akturk, M. Gurfinkel,
A. Lelis, J. Suehle, “Energy and time dependent
dynamics of trap occupation in 4h-sic mosfets,”
IEEE Transactions on Electron Devices 55(8), 2061-2070 (2008).
11)
Invited: A. Akturk, N. Goldsman, “Single-walled zig-zag carbon
nanotube steady state transport characteristics,” Special Issue of the Journal of Computational and Theoretical Nanoscience
on ‘Semiconductor Device Modeling and Simulation’ 5(6), 1138-1144 (2008).
10) Z. Dilli, N. Goldsman, M. Peckerar, A. Akturk, G. Metze,
“Design
and testing of a self-powered 3-d integrated soi cmos system,” Microelectronic Engineering 85(2), 388-394 (2008).
9) A. Akturk, N. Goldsman, G. Pennington, A. Wickenden,
“Terahertz
current oscillations in single-walled zig-zag carbon nanotubes,”
Physical Review Letters 98, 166803-1-4 (2007).____also in Virtual Journal of Nanoscale Science and Technology 15(17) (2007).
8) G. Pennington, N. Goldsman, A. Akturk, A. Wickenden,
“Deformation
potential carrier-phonon scattering in semiconducting carbon nanotube
transistors,” Applied
Physics Letters 90(2),
062110-1-3 (2007).____also
in Virtual Journal of Nanoscale Science
and Technology 15(7) (2007).
7)
A. Akturk, N. Goldsman, G. Pennington, A. Wickenden,
“Electron
transport and velocity oscillations in a carbon nanotube,”
IEEE Transactions on Nanotechnology 6(4), 469-474 (2007).
6)
A. Akturk, N. Goldsman, G. Pennington, “Self-consistent ensemble monte carlo simulations show terahertz oscillations in
single-walled carbon nanotubes,” Journal of Applied Physics 102,
073720-1-7 (2007).____also in Virtual Journal of Nanoscale Science and Technology 16(18) (2007).
5)
A. Akturk, J. Allnut,
Z. Dilli, N. Goldsman, M. Peckerar,
“Device
modeling at cryogenic temperatures: effects of incomplete ionization,”
IEEE Transactions on Electron Devices
54(11), 2984-2990 (2007).
4) A. Akturk, N. Goldsman, G. Metze,
“Self-consistent
modeling of heating and mosfet performance in
three-dimensional integrated circuits,” IEEE Transactions on Electron Devices 52(11), 2395-2403 (2005).
3)
A. Akturk, N. Goldsman,
L. Parker, G. Metze, “Mixed-mode temperature
modeling of full-chip based on individual non-isothermal device operations,”
Solid-State Electronics 49(7), 1127–1134 (2005).
2) A. Akturk, G. Pennington, N. Goldsman, “Quantum modeling and
proposed designs of carbon nanotube (cnt) embedded
nanoscale mosfets,” IEEE Transactions on Electron Devices 52(4), 577-584 (2005).
1) A. Akturk, N. Goldsman, G. Metze, “Increased cmos inverter switching speed with asymmetrical doping,” Solid-State Electronics 47(2), 185–192
(2003).
Patent
United States Patent, 7,286,359
M.
Khbeis, G. Metze, N. Goldsman, A. Akturk, “Use
of thermally conductive vias to extract heat from
microelectronic chips and method of manufacturing”, October 23
(2007).
Abstract: A cooling device for a microcircuit
provides a direct path of thermal extraction from a high heat producing area
to a cooler area. A thermal insulation layer is formed on a body having at
least one component thereon that generates the high heat producing area. At
least one via is formed through an entire thickness of the insulation layer
and is in direct communication with the high heat producing area. Heat from
the high heat producing area is channeled through each via to the cooler
area, which may be ambient atmosphere or a good thermal conductor, such as a
heat sink. A thermal conductive material may be deposited within the via and
increase the rate of thermal extraction therethrough.
Conferences
78) A. C. Ahyi, S. Dhar, Z. Dilli, A. Akturk, N. Goldsman, A. Ghanbari, “Reliability testing of SiC MOS devices at 500°C,” Int. Reliability Physics Symposium (IRPS), (31 March-4 April
2019).
77) A. Akturk, J. McGarrity, N. Goldsman, P. Ateshian, “Effects of
heavy ion radiation in novel silicon carbide integrated circuits,” 27th Annual Single Event Effects (SEE) Symposium, (21-24
May 2018).
76) P. Ateshian, A. Akturk, “Silicon carbide mask programmable gate array (MPGA) for space
commercial and industrial applications,” 27th
Annual Single Event Effects (SEE) Symposium, (21-24 May 2018).
75) Invited: A. Akturk, J. McGarrity, N. Goldsman, D.
J. Lichtenwalner, B. Hull, D. Grider,
R. Wilkins, “The effects of radiation on the
terrestrial operation of SiC MOSFETs,” Int. Reliability
Physics Symposium (IRPS), (11-15 March 2018).
73) D. J. Lichtenwalner, A. Akturk et al, “Reliability of SiC power devices against cosmic ray neutron
single-event burnout,” Proceedings of Int. Conference on
Silicon Carbide and Related Materials (ICSCRM), (17-22 Sep. 2017).
72) B. Cusack, A. Akturk et al, “Germanium
Mesa Photodiode Development and Readout Circuit,”
Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (7-9
Dec. 2016)
71) B. Cusack, A. Akturk et al, “Silicon Carbide
Device Fabrication and Product Line Development,”
Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (7-9
Dec. 2016).
70) Z. Dilli, A. Akturk, N. Goldsman,
“An Enhanced Specialized SiC Power
MOSFET Simulation System,” Proceedings of Int. Conf. on
Simulation of Semiconductor Processes and Devices (SISPAD), (9-11 Sept.
2015).
69)
D. Ettisserry, N. Goldsman,
A. Akturk, A. J. Lelis, “Modeling of
Oxygen-Vacancy Hole Trap Activation in 4H-SiC MOSFETs using Density
Functional Theory and Rate Equation Analysis,” Proceedings of Int. Conf.
on Simulation of Semiconductor Processes and Devices (SISPAD), (9-11 Sept.
2015).
68) R. Wilkins, A. Akturk, R. C. Dwivedi, B. B. Gersey,
“Terrestrial Neutron Induced
Failures in Commercial SiC Power MOSFETs at 27C and 150C,” Proceedings of IEEE Radiation Effects Data Workshop (REDW),
(2015).
67) I. P. Farneth, M. B. Satinu,
H. Wang, A. Khaligh, S. Potbhare,
S. Giroux, A. Akturk, N. Goldsman, “Design of a phase-shifted ZVS full-bridge front-end DC/DC converter
for fuel cell inverter applications,” Proceedings of IEEE
Transportation Electrification Conference and Expo (ITEC), (2014).
66) K. Rashed, R. Wilkins, A. Akturk, R. C.
Dwivedi, B. B. Gersey, “Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETs,” Proceedings of IEEE Radiation Effects Data Workshop (REDW),
(2014).
65) Invited: N. Goldsman, A. Akturk, “Key Issues
in the Modeling of SiC Electronic Devices,” Proceedings of Compact Modeling Workshop at
the Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (9-11 Sept.
2014).
64) D. Ettisserry, N. Goldsman,
A. Akturk, A. J. Lelis, “Effects of
Carbon-Related Oxide Defects on the Reliability of 4H-SiC MOSFETs,” Proceedings
of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (9-11 Sept.
2014).
63) A. Akturk, N. Goldsman, S. Potbhare, “Electro-Thermal Simulation of Silicon Carbide Power
Modules,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes and
Devices (SISPAD), (9-11 Sept. 2014).
62) A. Akturk, A. C. Ahyi, S. Dhar, S.
Bauman, S. Potbhare, N. Goldsman “Design, Fabrication and Characterization
of Deep Ultraviolet Silicon Carbide Avalanche Photodiodes,” Proceedings of Int. Semiconductor Device Research
Symposium (ISDRS), 1-2 (11-13 Dec.
2013).
61) S. Salemi, D.P. Ettisserry,
A. Akturk, N. Goldsman, A. Lelis,
“Density Functional and Monte Carlo-based Electron Transport
Simulation in 4H-SiC(0001)/SiO2 DMOSFET Transition
Region,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes and
Devices (SISPAD), (3-5 Sept. 2013).
60) D.P. Ettisserry, S. Salemi,
N. Goldsman, S. Potbhare,
A. Akturk, A. Lelis, “Identification
and Quantification of 4H-SiC (0001)/SiO2 Interface Defects by Combining
Density Functional and Device Simulations,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), (3-5 Sept.
2013).
59) N. Goldsman, F. Yesilkoy, S. Potbhare, M. Peckerar, A. Akturk, K. Choi, W. Churaman,
N. Dhar, “Micro-Antenna
Coupled Nano-MIM Diodes: Modeling, Design,Processing
and Application,” Proceedings of AVS 59th Int.
Symposium & Exhibition, (28 Oct. - 2 Nov. 2012).
58) A. Akturk, S. Potbhare, J.
Booz, N. Goldsman, D. Gundlach, R. Nandwana, K. Mayaram, “CoolSPICE: SPICE for Extreme Temperature Range Integrated
Circuit Design and Modeling,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), (5-7 Sept.
2012).
57) X. Shao, N. Goldsman, N. Dhar,
F. Yesilkoy, A. Akturk, S. Potbhare,
M. Peckerar, “Simulation Study of Rectifying Antenna Structure for Infrared Wave
Energy Harvesting Applications,”
Proceedings of Int. Conf. on
Simulation of Semiconductor Processes and Devices (SISPAD), (5-7 Sept.
2012).
56) S. Salemi, N. Goldsman, A. Akturk, A. Lelis,
“Density Functional Theory
Based Investigation of Defects and Passivation of 4H-Silicon Carbide/SiO2
Interfaces,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), (5-7 Sept.
2012).
55) A. Akturk, S. Salemi, N. Goldsman, S. Potbhare, A. Lelis, “Density
functional theory based simulation of carrier
transport in silicon carbide and silicon carbide-silicon dioxide interfaces,” Proceedings
of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 119-122
(8-10 Sept. 2011).
54) Z. Dilli, A. Akturk, N. Goldsman, M. A. Holloway, J. C. Rodgers, “Nonlinear behavior of electrostatic discharge
protection structures under high-power microwave excitation: Modeling and
simulation,” Proceedings of IEEE Int. Symposium on
Circuits and Systems (ISCAS), 1840-1843 (2011).
53) S. Salemi, A. Akturk, S. Potbhare, A. Lelis, N. Goldsman, “The effect of different passivations on
near interface trap density of 4H-SiC/SiO2 structures,” Proceedings
of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (7-9 Dec. 2011).
52) Z. Dilli, R. Curley, A. Akturk,
N. Goldsman, “Statistical vulnerability analysis to study intra-chip coupling of
high power microwave signals,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 1-2 (7-9 Dec. 2011).
51) M. Dandin, A. Akturk, A. Vert,
S. Soloviev, P. Sandvik, S. Potbhare, N. Goldsman, P. Abshire, K. P. Cheung, “Optoelectronic characterization of 4H-SiC
avalanche photodiodes operated in DC and in geiger
mode,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 1-2 (7-9 Dec. 2011).
50) S. Salemi, A. Akturk, S. Potbhare, A. Lelis, N. Goldsman, “The effects of different silicon carbide — silicon dioxide interface passivations on transition region mobility and transport,” Proceedings
of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (7-9 Dec. 2011).
49) A. K. Sood, R. A. Richwine, Y. R. Puri, A.
Akturk, N. Goldsman, S. Potbhare,
G. Fernandes, C.H. Hsu, J. H. Kim, J. Xu, N. K. Dhar, P. S. Wijewarnasuriya, B. I. Lineberry, “Design and development of carbon
nanostructure-based microbolometers for IR imagers and sensors,” Proc. of the
SPIE 7679, 76791Q-76791Q-11 (2010).
48) S. Potbhare, A. Akturk, N. Goldsman, M. Peckerar, J. M. McGarrity, A. Agarwal, “Modeling and design of high temperature silicon carbide
DMOSFET based medium power DC-DC converter,” Proceedings of Int. Conf. on High
Temperature Electronics (HiTEC), (11-13 May
2010).
47) Invited: A. Akturk, S. Potbhare, M. Peckerar, M. Dornajafi, Z. Dilli, N. Goldsman, K. Eng, R. Young, E. Longoria, T. Gurrieri,
J. Levy, M. S. Carroll “Compact
modeling of cryogenic CMOS circuits using Verilog-A,” Silicon Qubit – Quantum Information and Technology
Workshop (2009).
46) A. Akturk, M. Holloway, D. Gundlach, S. Potbhare, B. Li, N. Goldsman,
M. Peckerar, K. P. Cheung, “Distributed numerical modeling of low temperature MOSFET
operation,” Proceedings of Int. Semiconductor Device Research Symposium (ISDRS),
1-2 (9-11 Dec. 2009).
45) A. Akturk, S. Potbhare, N. Goldsman, A. Lelis, “Self-consistent thermal and electrical analysis of silicon
carbide power DMOSFET heating and cooling,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 1-2 (9-11 Dec. 2009).
44) A. Akturk, M. Dandin, N. Goldsman, P. Abshire, “Modeling of perimeter-gated silicon avalanche diodes
fabricated in a standard single-well CMOS process,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 1-2 (9-11 Dec. 2009).
43) S. Potbhare, N. Goldsman, A. Akturk, A. Lelis, “Effects of random surface charge distribution on transport
in 4H-SiC MOSFETs,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 1-2 (9-11 Dec. 2009).
42) A. Akturk, M. Peckerar, M. Dornajafi, N. Goldsman, K. Eng, T. Gurrieri, M. S.
Carroll, “Impact ionization and freeze-out model for simulation of low gate
bias kink effect in soi-mosfets operating at liquid
he temperature,” Proceedings of Int. Conf. on
Simulation of Semiconductor Processes and Devices (SISPAD), 147-150 (9-11
Sept. 2009).
41) S. Potbhare,
A. Akturk, N. Goldsman,
A. Lelis, S. Dhar, S.-H. Ryu, A. Agarwal, “Modeling the effect of
conduction band density of states on interface trap occupation and its
influence on 4h-sic mosfet performance,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 151-154 (9-11 Sept. 2009).
40) S. Potbhare,
A. Akturk, “Mixed mode modeling and
characterization of a 4h-sic power dmosfet based
dc-dc power converter,” Proceedings of Int. Conference on Silicon Carbide and Related
Materials (ICSCRM), (11-16 Oct. 2009).
____Materials Science Forum vols. 645-648,
1163 (2010).
39) S. Potbhare,
A. Akturk, “Effect of band-edge interface
traps and transition region mobility on transport in 4h-sic mosfets,” Proceedings of Int. Conference on Silicon Carbide and Related
Materials (ICSCRM), (11-16 Oct. 2009).
____Materials Science Forum vols. 645-648,
975 (2010).
38) M. Tadjer,
R. Stahlbush, K. Hobart, F. Kub,
A. Akturk, S. Haney, B. Hull, “Characterization of 4h-sic
schottky and p-n diodes using thermally stimulated current,” Proceedings of the 51st
Electronic Materials Conference EMC), 101 (24-26 June 2009).
37) A. Akturk, N. Goldsman,
H. Pandana, R. Gomez,J. Khan, “Numerical modeling of a
deoxyribonucleic acid microassay: carbon nanotube
thin film transistor,” Proceedings
of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD),
93-96 (9-11 Sept. 2008).
36) A. Akturk, N. Goldsman,
S. Aslam, J. Sigwarth,
F. Herrero, “Numerical modeling and design of single photon counter 4h-sic
avalanche photodiodes,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes
and Devices (SISPAD), 201-204 (9-11 Sept. 2008).
35) A. Akturk, N. Goldsman,
“Unusually
strong temperature dependence of graphene electron mobility,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 173-176 (9-11 Sept. 2008).
34) S. Potbhare,
A. Akturk, N. Goldsman, A. Lelis,
“Effects
of quantum confinement on interface trap occupation in 4h-sic mosfets,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes
and Devices (SISPAD), 181-184 (9-11 Sept. 2008).
33) S. Potbhare, N. Goldsman,
A. Akturk, A. Lelis,
R. Green, “Investigation of on and off state characteristics of 4h-sic dmosfets,” Proceedings of 7th European Conference on Silicon Carbide
and Related Materials (ECSCRM), WeP-62 (7-11 Sept. 2008).
____Materials Science Forum vols. 615-617,
805 (2009).
32) A. Akturk, N. Goldsman,
Z. Dilli, M. Peckerar, “Effects of cryogenic
temperatures on small-signal mosfet capacitances,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 1-2 (12-14 Dec. 2007).
31) Z. Dilli, A.
Akturk, N. Goldsman, “Controlled localized heating
on integrated circuits for cold-ambient temperature applications,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 1-2 (12-14 Dec. 2007).
30) T. Rusak,
A. Akturk, N. Goldsman,
“Numerical
modeling of nanotube embedded chemicapacitive
sensors,” Proceedings of Int.
Semiconductor Device Research Symposium (ISDRS), 1-2 (12-14 Dec. 2007).
29) A. Akturk, N. Goldsman, G. Pennington, “Modeling carbon nanotube electron-phonon
resonances shows terahertz current oscillations,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 225-228 (25-27 Sept.
2007).
28) S. Potbhare, N. Goldsman,
G. Pennington, A. Akturk, A. Lelis, “Transient characterization of
interface traps in 4H-SiC mosfets,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 177-180 (25-27 Sept.
2007).
27) A. Akturk, N. Goldsman, G. Pennington, “Terahertz sensors and sources:
electron-phonon resonances in carbon nanotubes,” Nanoelectronic Devices for Defense and Security
Conference, (18-21 June 2007).
26) G. Pennington, A. Akturk, N. Goldsman, “Electronic properties of carbon nanotube sensing
transistors: scattering from charged absorbents,” Nanoelectronic Devices for Defense and Security
Conference, (18-21 June 2007).
25) Invited: A. Wickenden, B. Nichols, M. Ervin, S. Kilpatrick, A. Akturk, G. Pennington, N. Goldsman, G. Esen, A. Manasson,
M. Fuhrer, “Carbon
nanotube devices for sensing and communications applications,”
211th Electrochemical
Society Meeting H4, 1052 (6-11 May 2007).
24) G.
Pennington, N. Goldsman, A. Akturk, A. Wickenden, “Multisubband boltzmann
carrier transport in carbon nanotube transistors,” American Physical Society March Meeting,
K1.00106 (5-9 March 2007).
23) Invited: N. Goldsman, A. Akturk, “Analysis and design of key phenomena in electronics:
nanostructures and devices,” Proceedings
of Int. Society for Optical Eng. (SPIE) Optics East Core Technology Conf.
6370, 63700I (1-4 Oct. 2006).
22) Ankush Varma, Yaqub
Afridi, Akin Akturk, Paul Klein, Allen Hefner, Bruce Jacob, “Modeling MEMS Microhotplate
Structures With SystemC,”
Proceedings of Int. Conf. on Compilers,
Architecture, and Synthesis for Embedded Systems (CASES), 54-64
(23-25 Oct. 2006).
21) A. Akturk, G. Pennington, N.
Goldsman, A. Wickenden, “Quantum electron transport in carbon
nanotubes: length dependence and velocity oscillations,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 31-34 (6-8 Sept.
2006).
20) A. Akturk, N. Goldsman, Z. Dilli,
M. Peckerar, “Device performance and package induced
self-heating effects at cryogenic temperatures,” Proceedings of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 240-243 (6-8 Sept.
2006).
19) Z. Dilli, N. Goldsman, A. Akturk, G. Metze, “A
3-d time-dependent greens function approach to modeling electromagnetic noise
in on-chip interconnect networks,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes
and Devices (SISPAD), 337-340 (6-8 Sept. 2006).
18) A. Akturk, N. Goldsman, G. Metze, “An
efficient inclusion of self-heating and quantum effects in soi device simulations,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 99-100 (7-9 Dec. 2005).
17) A. Akturk, N. Goldsman,
N. Dhar, P. S. Wijewarnasuriya, “Modeling the
temperature dependence and optical response of hgcdte
diodes,”
Proceedings of Int. Semiconductor
Device Research Symposium (ISDRS), 70-71 (7-9 Dec. 2005).
16) G. Pennington, A. Akturk, J. M. McGarrity, N.
Goldsman, “Transport properties of wide band gap
nanotubes,”
Proceedings of Int. Semiconductor
Device Research Symposium (ISDRS), 346-347 (7-9 Dec. 2005).
15) Z. Dilli, N. Goldsman, A. Akturk, “An impulse-response based methodology for
modeling complex interconnect networks,” Proceedings
of Int. Semiconductor Device Research Symposium (ISDRS), 64-65 (7-9
Dec. 2005).
14) A. Akturk, G. Pennington, N. Goldsman, “Numerical device analysis of all-around gate carbon nanotube (cnt) embedded field-effect transistors (fets),” Proceedings of 16th European Conf. on Diamond,
Diamond-Like Materials, Carbon Nanotubes and Nitrides, [5.6.11] (Sep.
11-16, 2005).
13) G. Pennington, A. Akturk, N. Goldsman, “Low-field electronic
transport in single-walled semiconducting carbon nanotubes,” Proceedings of 16th European
Conf. on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides,
[15.5.2] (Sep. 11-16, 2005).
12) A. Akturk, N. Goldsman,
G. Metze, “Coupled simulation of device performance and
heating of vertically stacked three-dimensional integrated circuits,”
Proceedings of Int. Conf. on Simulation
of Semiconductor Processes and Devices (SISPAD), 115–118 (1-3 Sept. 2005).
11) A. Akturk, G. Pennington, N. Goldsman, “Device behavior modeling
for carbon nanotube silicon-on-insulator mosfets,”
Proceedings of Int. Conf. on Simulation
of Semiconductor Processes and Devices (SISPAD), 51–54 (1-3 Sept.
2005).
10) G. Pennington, A. Akturk, N. Goldsman, “Low-field transport model
for semiconducting carbon nanotubes,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes
and Devices (SISPAD), 87–90 (1-3 Sept. 2005).
9) G. Pennington, A. Akturk, N. Goldsman, “Phonon-limited transport in carbon nanotubes using the monte carlo method,” Proceedings of Int. Workshop on Computational Electronics (IWCE-10), 51-52
(Oct. 2004).
8) A. Akturk, G. Pennington, N. Goldsman, “Numerical performance
analysis of carbon nanotube (cnt) embedded mosfets,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes
and Devices (SISPAD), 153–156 (2-4 Sept. 2004).
7) A. Akturk, G. Pennington, N. Goldsman, “Temperature dependent
mobility model for single-walled zig-zag carbon nanotubes (cnts),” Proceedings of 8th Int. Conf. on Nanometer-Scale Science and
Technology (NANO-8), 728[1846]–729[1846] (28 June-2 July 2004).
6) A. Akturk, G. Pennington, N. Goldsman, “Characterisation of nanoscale carbon
nanotube (cnt) embedded cmos
inverters,” Proceedings of 8th Int. Conf. on
Nanometer-Scale Science and Technology (NANO-8), 769[413]–770[413] (28
June-2 July 2004).
5) A. Akturk, L. Parker, N. Goldsman, G. Metze, “Mixed-mode simulation of
non-isothermal quantum device operation and full-chip heating,” Proceedings of Int. Semiconductor Device Research Symposium (ISDRS),
508–509 (10-12 Dec. 2003).
4) G. Pennington, A. Akturk, N. Goldsman, “Electron mobility of a semiconducting carbon
nanotube,” Proceedings of Int. Semiconductor Device
Research Symposium (ISDRS), 412–413 (10-12 Dec. 2003).
3) A. Akturk, N. Goldsman, G. Metze, “Coupled modeling of time-dependent full-chip
heating and quantum non-isothermal device operation,” Proceedings of Int. Conf.
on Simulation of Semiconductor Processes and Devices (SISPAD), 311–314
(3-5 Sept. 2003).
2) A. Akturk, G. Pennington, N. Goldsman, “Modeling the enhancement of nanoscale mosfets by embedding carbon nanotubes in the channel,” Proceedings of Third IEEE Conf. on Nanotechnology (IEEE-NANO) 1, 24-27 vol.2 (12-14 Aug.
2003).
1) A. Akturk, N. Goldsman, G. Metze, “Faster cmos
inverter switching obtained with channel engineered asymmetrical halo
implanted mosfets,” Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 118–121
(5-7 Dec. 2001).
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